?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com fqa46n15 / fqa46n15_f109 rev. a1 fqa46n15 / fqa46n15_f109 150v n-channel mosfet august 2007 qfet ? fqa46n15 / fqa46n15_f109 150v n-channel mosfet features ? 50a, 150v, r ds(on) = 0.042 ? @v gs = 10 v ? low gate charge ( typical 85 nc) ? low crss ( typical 100pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability ? 175 c maximum junction temperature rating description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. absolute maximum ratings thermal characteristics d g s gs d to-3p n fqa series symbol parameter fqa46n15 units v dss drain-source voltage 150 v i d drain current - continuous (t c = 25c) 50 a - continuous (t c = 100c) 35.3 a i dm drain current - pulsed (note 1) 200 a v gss gate-source voltage 25 v e as single pulsed avalanche energy (note 2) 650 mj i ar avalanche current (note 1) 50 a e ar repetitive avalanche energy (note 1) 25 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25c) 250 w - derate above 25c 1.67 w/c t j , t stg operating and storage temperature range -55 to +175 c t l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 0.6 c /w r cs thermal resistance, case-to-sink 0.24 -- c /w r ja thermal resistance, junction-to-ambient -- 40 c /w
2 www.fairchildsemi.com fqa46n15 / fqa46n15_f109 rev. a1 fqa46n15 / fqa46n15_f109 150v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 0.43mh, i as =50a, v dd = 25v, r g = 25 ?, starting t j = 25c 3. i sd 45.6a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature device marking device package reel size tape width quantity fqa46n15 fqa46n15 to-3p n -- -- 30 fqa46n15 fqa46n15_f109 to-3pn -- -- 30 symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 150 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.16 -- v/c i dss zero gate voltage drain current v ds = 150 v, v gs = 0 v -- -- 1 a v ds = 120 v, t c = 150c -- -- 10 a i gssf gate-body leakage current, forward v gs = 25 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -25 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2.0--4.0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 25a -- 0.033 0.042 ? g fs forward transconductance v ds = 40 v, i d = 25a (note 4) -- 36 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 2500 3250 pf c oss output capacitance -- 520 670 pf c rss reverse transfer capacitance -- 100 130 pf switching characteristics t d(on) turn-on delay time v dd = 75 v, i d = 45.6a, r g = 25 ? (note 4, 5) -- 35 80 ns t r turn-on rise time -- 320 650 ns t d(off) turn-off delay time -- 210 430 ns t f turn-off fall time -- 200 410 ns q g total gate charge v ds = 120 v, i d = 45.6a, v gs = 10 v (note 4, 5) -- 85 110 nc q gs gate-source charge -- 15 -- nc q gd gate-drain charge -- 41 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 50 a i sm maximum pulsed drain-source diode forward current -- -- 200 a v sd drain-source diode forward voltage v gs = 0 v, i s =50a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 45.6 a, di f / dt = 100 a/ s (note 4) -- 130 -- ns q rr reverse recovery charge -- 0.55 -- c
3 www.fairchildsemi.com fqa46n15 / fqa46n15_f109 rev. a1 fqa46n15 / fqa46n15_f109 150v n-channel mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs . source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 246810 10 -1 10 0 10 1 10 2 notes : ? 1. v ds = 40v 2. 250 s pulse test -55 ? 175 ? 25 ? i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : ? 1. 250 s pulse test 2. t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 0 10 1 10 2 175 ? notes : ? 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 40 80 120 160 200 240 0.00 0.05 0.10 0.15 0.20 note : t ? j = 25 ? v gs = 20v v gs = 10v r ds(on) [ : ], drain-source on-resistance i d , drain current [a] 0 102030405060708090 0 2 4 6 8 10 12 v ds = 75v v ds = 30v v ds = 120v note : i ? d = 45.6 a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : ? 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v]
4 www.fairchildsemi.com fqa46n15 / fqa46n15_f109 rev. a1 fqa46n15 / fqa46n15_f109 150v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : ? 1. v gs = 10 v 2. i d = 22.8 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : ? 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 25 50 75 100 125 150 175 0 10 20 30 40 50 i d , drain current [a] t c , case temperature [ ] ? 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 10 p s dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) notes : ? 1. t c = 25 o c 2. t j = 175 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : ? 1. z jc (t) = 0.6 /w m ax. ? 2. d uty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) sing le p ulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
5 www.fairchildsemi.com fqa46n15 / fqa46n15_f109 rev. a1 fqa46n15 / fqa46n15_f109 150v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com fqa46n15 / fqa46n15_f109 rev. a1 fqa46n15 / fqa46n15_f109 150v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
7 www.fairchildsemi.com fqa46n15 / fqa46n15_f109 rev. a1 fqa46n15 / fqa46n15_f109 150v n-channel mosfet mechanical dimensions dimensions in millimeters to-3pn
9 www.fairchildsemi.com fqa46n15 / fqa46n15_f109 rev. a1 fqa46n15 / fqa46n15_f109 150v n-channel mosfet trademarks the following are registered and unregistered trademarks and service marks fairchild semiconductor ow ns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design . fairchild does not assume any liability arising out of the application or use of any product or circuit d escribed herein; neither does it convey any license under its patent rights, nor the rights of othe rs. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif ically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? ? datasheet identification product status definition advance information for mative or in design this datasheet contains the design s pecifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data; supplementary data will be pub- lished at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specifications. fairchil d semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specificati ons on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference infor- mation only. rev. i30
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